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AO3424 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3424 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3424 is Pb-free (meets ROHS & Sony 259 specifications). AO3424L is a Green Product ordering option. AO3424 and AO3424L are electrically identical.
Features
VDS (V) = 30V ID = 2 A (V GS = 10V) RDS(ON) < 80m (VGS = 10V) RDS(ON) < 95m (VGS = 4.5V) RDS(ON) < 157m (VGS = 2.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C
F
Maximum 30 12 2 2 8 1.4 0.9 -55 to 150
Units V V A
TA=70CF
ID IDM PD TJ, TSTG
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 70 100 63
Max 90 125 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO3424
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=2A Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=2A VGS=2.5V, ID=1A gFS VSD IS Forward Transconductance VDS=5V, ID=2A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1 8 67 97 76 121 11.7 0.8 1 1.8 226 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 39 29 1.4 2.6 VGS=4.5V, VDS=15V, ID=2A 1.3 0.5 2.6 VGS=10V, VDS=15V, RL=7.5, RGEN=6 IF=2A, dI/dt=100A/s 3.2 14.5 2.1 10.2 3.8 4 5 22 3 13 5 1.7 3.2 270 80 116 95 157 1.45 Min 30 Typ 37 0.001 1 5 100 1.8 Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. F. The maximum current rating is limited by bond-wires. Rev 0 : Mar 2006
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10V 12 3.5V 4V 6V 9 ID (A) ID(A) 3V 6 10
8
VDS=5V
6 VGS=2.5V 3
4 125C 2 25C
0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5
0 0 0.5 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1 3.5
200 175 150 RDS(ON) (m) 125 100 75 50 25 0 0 2 4 6 8 10 VGS=10V VGS=4.5V VGS=2.5V
1.8 VGS=4.5V ID=2A
270
Normalized On-Resistance
1.6
1.7
VGS=10V 3.6 ID=2A
1.4
1.2
VGS=2.5 ID=1A
1
0.8 0 25 50 75 100 125
13
150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 150 140 130 120 RDS(ON) (m) 110 100 90 80 70 60 50 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=2A
1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C
Alpha & Omega Semiconductor, Ltd.
AO3424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=15V ID=2A Capacitance (pF) 400 350 300 250 200 150 100 50 0 0 1 2 3 Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 RDS(ON) limited ID (Amps) 1s 1.0 10s 1ms 10ms DC TJ(Max)=150C TA=25C 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.1s 0 0.001 5 10s 100s Power (W) 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss
4
VGS (Volts)
3
2
1
270
20 TJ(Max)=150C TA=25C
1.7 3.6
15
10
13
0.01
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.

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